BR24T02FVT-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Base Part Number :

BR24T02

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

5.5V

Memory Format :

EEPROM

Pbfree Code :

yes

Memory Size :

2Kb 256 x 8

Published :

2013

Contact Plating :

Copper, Tin

Standby Current-Max :

0.000002A

Memory Type :

Non-Volatile

Terminal Pitch :

0.65mm

Serial Bus Type :

I2C

Factory Lead Time :

11 Weeks

Packaging :

Tape and Reel (TR)

Memory Width :

8

Interface :

2-Wire, I2C, Serial

Write Cycle Time-Max (tWC) :

5ms

Endurance :

1000000 Write/Erase Cycles

Length :

4.4mm

Memory Interface :

I2C

Qualification Status :

Not Qualified

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Supply Voltage-Min (Vsup) :

1.6V

Data Retention Time-Min :

40

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Write Cycle Time - Word, Page :

5ms

Number of Terminations :

8

Number of Pins :

8

Supply Current-Max :

0.002mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

-40°C~85°C TA

I2C Control Byte :

1010DDDR

Terminal Finish :

Matte Tin (Sn)

Supply Voltage :

2.5V

Peak Reflow Temperature (Cel) :

225

Access Time :

900 ns

Height Seated (Max) :

1.2mm

Write Protection :

Hardware

Density :

2 kb

Terminal Position :

Dual

Number of Functions :

1

Clock Frequency :

400kHz

Voltage - Supply :

1.6V~5.5V

Width :

3mm