BMS4007
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- Mfr.Part #
- BMS4007
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 60A TO220ML
- Stock
- 20,554
- In Stock ：
- 20,554
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 60A
- Power Dissipation-Max :
- 2W Ta 30W Tc
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 460 ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 100 ns
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Ta
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 75V
- Packaging :
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds :
- 9700pF @ 20V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 160 ns
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 180ns
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 30A, 10V
- Number of Pins :
- 3
- Published :
- 2010
- Datasheets
- BMS4007
N-Channel Bulk 7.8m Ω @ 30A, 10V ±20V 9700pF @ 20V 160nC @ 10V TO-220-3 Full Pack
BMS4007 Overview
A device's maximum input capacitance is 9700pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 460 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 100 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
BMS4007 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 460 ns
BMS4007 Applications
There are a lot of ON Semiconductor
BMS4007 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BMS4003 | onsemi | 26,118 | MOSFET N-CH 100V 18A TO220ML |
| BMS4007-1E | onsemi | 19,832 | MOSFET N-CH 75V 60A TO-220ML |
| BMS4C | onsemi | 6 | BMS4C |
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