BMS4003

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 10V

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

5V @ 1mA

Turn-Off Delay Time :

27 ns

Avalanche Energy Rating (Eas) :

53 mJ

Continuous Drain Current (ID) :

18A

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

72A

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Published :

2011

Drain to Source Voltage (Vdss) :

100V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Rise Time :

33ns

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.065Ohm

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

2W Ta 25W Tc

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Mount :

Through Hole

ECCN Code :

EAR99

Mounting Type :

Through Hole

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 10V

FET Type :

N-Channel