BMS4003

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 10V

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 10V

Turn-Off Delay Time :

27 ns

Turn On Delay Time :

16 ns

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

53 mJ

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.065Ohm

Rise Time :

33ns

FET Type :

N-Channel

Pin Count :

3

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Vgs(th) (Max) @ Id :

5V @ 1mA

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 20V

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Power Dissipation-Max :

2W Ta 25W Tc

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

72A

Continuous Drain Current (ID) :

18A