BFX34
- Mfr.Part #
- BFX34
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- BFX34
- Stock
- 40,380
- In Stock :
- 40,380
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Element Configuration :
- Single
- Width :
- 9.4mm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 1 V
- Terminal Form :
- Wire
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 120V
- Height :
- 6.6mm
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- NPN
- Power Dissipation :
- 870mW
- Length :
- 9.4mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Max Collector Current :
- 5A
- Voltage - Rated DC :
- 120V
- Operating Temperature :
- 200°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 10μA
- Base Part Number :
- BFX34
- Max Power Dissipation :
- 870mW
- Mount :
- Through Hole
- Current Rating :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 250ns
- Datasheets
- BFX34
BFX34 Documents
NPN 200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Tube Through Hole
BFX34 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 5A volts is possible.
BFX34 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
BFX34 Applications
There are a lot of STMicroelectronics
BFX34 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BFX30 | Central Semiconductor | 0 | - |
| BFX34 | Central Semiconductor | 41,687 | TRANS NPN 60V 5A TO39 |
















