BF623,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Max Collector Current :

50mA

Packaging :

Tape and Reel (TR)

VCEsat-Max :

0.8 V

Transistor Type :

PNP

Max Power Dissipation :

1.1W

Base Part Number :

BF623

Series :

Automotive, AEC-Q101

Vce Saturation (Max) @ Ib, Ic :

800mV @ 5mA, 30mA

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Frequency :

60MHz

Mount :

Surface Mount

Number of Terminations :

3

Number of Pins :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Case Connection :

COLLECTOR

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Number of Elements :

1

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

250V

Pin Count :

3

Collector Base Voltage (VCBO) :

250V

Gain Bandwidth Product :

60MHz

Current - Collector Cutoff (Max) :

10nA ICBO

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

250V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Terminal Form :

Flat

Power Dissipation :

1.1W

JESD-30 Code :

R-PSSO-F3

Lead Free :

Lead Free

JESD-609 Code :

e3

Package / Case :

TO-243AA

Element Configuration :

Single

Max Breakdown Voltage :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

60MHz

RoHS Status :

ROHS3 Compliant