BF623,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1.1W

Number of Terminations :

3

Element Configuration :

Single

Max Breakdown Voltage :

250V

JESD-30 Code :

R-PSSO-F3

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Collector Base Voltage (VCBO) :

250V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

50mA

Radiation Hardening :

No

Base Part Number :

BF623

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Terminal Form :

Flat

Series :

Automotive, AEC-Q101

Contact Plating :

Tin

Case Connection :

COLLECTOR

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Transition Frequency :

60MHz

Number of Elements :

1

Power Dissipation :

1.1W

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250V

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Published :

2009

VCEsat-Max :

0.8 V

Frequency :

60MHz

Collector Emitter Breakdown Voltage :

250V

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

60MHz

Package / Case :

TO-243AA

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

800mV @ 5mA, 30mA

Transistor Type :

PNP

Pin Count :

3