BF259
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- Mfr.Part #
- BF259
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO39
- Stock
- 4,509
- In Stock ：
- 4,509
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 6.6mm
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 6mA, 30mA
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Max Power Dissipation :
- 5W
- Gain Bandwidth Product :
- 90MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Transition Frequency :
- 90MHz
- Frequency :
- 90MHz
- Pbfree Code :
- No
- Base Part Number :
- BF259
- Packaging :
- Bulk
- Operating Temperature :
- 200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 5W
- Width :
- 9.4mm
- Terminal Form :
- Wire
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Length :
- 9.4mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 300V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 300V
- REACH SVHC :
- No SVHC
- hFE Min :
- 25
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Datasheets
- BF259
NPN 200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
BF259 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 30mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 6mA, 30mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 90MHz.A maximum collector current of 100mA volts can be achieved.
BF259 Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 6mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 90MHz
BF259 Applications
There are a lot of STMicroelectronics
BF259 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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