BF259

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Mfr.Part #
BF259
Manufacturer
STMicroelectronics
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 300V 0.1A TO39
Stock
4,509
In Stock :
4,509

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Packaging :
Bulk
Current - Collector Cutoff (Max) :
50nA ICBO
Collector Emitter Breakdown Voltage :
300V
Operating Temperature :
200°C TJ
Number of Pins :
3
Height :
6.6mm
Terminal Finish :
Tin/Lead (Sn/Pb)
Package / Case :
TO-205AD, TO-39-3 Metal Can
Collector Emitter Saturation Voltage :
1V
Collector Emitter Voltage (VCEO) :
300V
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 30mA 10V
Terminal Position :
BOTTOM
Power Dissipation :
5W
Max Power Dissipation :
5W
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Mount :
Through Hole
Base Part Number :
BF259
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
1V @ 6mA, 30mA
JESD-609 Code :
e0
Max Collector Current :
100mA
hFE Min :
25
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Number of Terminations :
3
Transistor Type :
NPN
Frequency :
90MHz
Collector Base Voltage (VCBO) :
300V
Element Configuration :
Single
Length :
9.4mm
Transition Frequency :
90MHz
Terminal Form :
Wire
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Width :
9.4mm
REACH SVHC :
No SVHC
Gain Bandwidth Product :
90MHz
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BF259 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:200°C TJ, Number of Pins:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Base Part Number:BF259, Number of Terminations:3, BF259 pinout, BF259 datasheet PDF, BF259 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BF259 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BF259


NPN 200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

BF259 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 30mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 6mA, 30mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 90MHz.A maximum collector current of 100mA volts can be achieved.

BF259 Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 6mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 90MHz


BF259 Applications


There are a lot of STMicroelectronics
BF259 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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