BDW94CF
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- Mfr.Part #
- BDW94CF
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 12A TO220F-3
- Stock
- 24,534
- In Stock ：
- 24,534
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Max Power Dissipation :
- 33W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- hFE Min :
- 100
- Height :
- 16.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- BDW94
- Current Rating :
- -12A
- Number of Terminations :
- 3
- Transistor Type :
- PNP - Darlington
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -100V
- Length :
- 10.4mm
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- Max Collector Current :
- 12A
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 33W
- JEDEC-95 Code :
- TO-220AB
- Polarity :
- PNP
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1mA
- VCEsat-Max :
- 3 V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 2.5V
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 4.6mm
- Datasheets
- BDW94CF
PNP - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW94CFP Overview
In this device, the DC current gain is 750 @ 5A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 100mA, 10A.With the emitter base voltage set at 2.5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -12A for this device.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
BDW94CFP Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is -12A
BDW94CFP Applications
There are a lot of STMicroelectronics
BDW94CFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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