BD899A-S
- Mfr.Part #
- BD899A-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220
- Stock
- 1,268
- In Stock :
- 1,268
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 500μA
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Base Part Number :
- BD899
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 16mA, 4A
- Polarity :
- NPN
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Power - Max :
- 2W
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Published :
- 1993
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- BD899A-S
BD899A-S Documents

NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BD899A-S Overview
In this device, the DC current gain is 750 @ 4A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 16mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
BD899A-S Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 16mA, 4A
the emitter base voltage is kept at 5V
BD899A-S Applications
There are a lot of Bourns Inc.
BD899A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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