BD899A-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-220-3

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Voltage (VCEO) :

80V

Packaging :

Tube

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Power - Max :

2W

Current - Collector Cutoff (Max) :

500μA

Collector Emitter Breakdown Voltage :

80V

Transistor Type :

NPN - Darlington

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 16mA, 4A

Collector Base Voltage (VCBO) :

80V

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 4A 3V

Case Connection :

COLLECTOR

Number of Terminations :

3

Base Part Number :

BD899

Polarity :

NPN

ECCN Code :

EAR99

Max Collector Current :

8A

Collector Emitter Saturation Voltage :

2.5V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Published :

1993

Pin Count :

3

Max Power Dissipation :

2W

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Number of Elements :

1

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Through Hole