BD810

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

-80V

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 300mA, 3A

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Number of Terminations :

3

Number of Pins :

3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

80V

Mounting Type :

Through Hole

Packaging :

Tube

Polarity/Channel Type :

PNP

Frequency :

1.5MHz

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Current Rating :

10A

Collector Base Voltage (VCBO) :

80V

Max Power Dissipation :

90W

Power Dissipation :

90W

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Width :

12.7mm

Max Collector Current :

10A

Package / Case :

TO-220-3

hFE Min :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 4A 2V

Pin Count :

3

Contact Plating :

Tin

REACH SVHC :

No SVHC

Published :

2001

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

80V

Element Configuration :

Single

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.1V

Gain Bandwidth Product :

1.5MHz

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

31.75mm

Transition Frequency :

1.5MHz

Height :

6.35mm

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

1mA ICBO

Lead Free :

Lead Free