BD679G
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- Mfr.Part #
- BD679G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126
- Stock
- 29,243
- In Stock ：
- 29,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 3
- Voltage :
- 80V
- Max Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 4A
- Current Rating :
- 4A
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Published :
- 1995
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BD679
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Current :
- 2A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 750
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD679G
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD679G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD679G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD679G Applications
There are a lot of ON Semiconductor
BD679G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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