BD679ASTU
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- Mfr.Part #
- BD679ASTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 1,329
- In Stock ：
- 1,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- 80V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2.8V
- hFE Min :
- 750
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Base Part Number :
- BD679
- Number of Elements :
- 1
- Factory Lead Time :
- 19 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Current Rating :
- 4A
- Published :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Length :
- 8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 10MHz
- Height :
- 11mm
- Current - Collector Cutoff (Max) :
- 500μA
- Width :
- 3.25mm
- Weight :
- 761mg
- Max Power Dissipation :
- 40W
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Mounting Type :
- Through Hole
- Datasheets
- BD679ASTU
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD679ASTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.8V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.
BD679ASTU Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD679ASTU Applications
There are a lot of ON Semiconductor
BD679ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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