BD679AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Voltage :

80V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

40W

Length :

7.74mm

Polarity :

NPN

Packaging :

Bulk

Height :

11.04mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

ECCN Code :

EAR99

Max Collector Current :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Collector Emitter Saturation Voltage :

2.8V

Mount :

Through Hole

Pin Count :

3

Transistor Type :

NPN - Darlington

Transistor Application :

AMPLIFIER

Published :

1997

Width :

2.66mm

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Number of Terminations :

3

Transition Frequency :

1MHz

Current :

2A

Collector Emitter Voltage (VCEO) :

80V

Element Configuration :

Single

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

hFE Min :

750

Voltage - Rated DC :

80V

Number of Elements :

1

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

500μA

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

Max Power Dissipation :

40W

Collector Emitter Breakdown Voltage :

80V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-225AA, TO-126-3

Weight :

4.535924g

Mounting Type :

Through Hole

Base Part Number :

BD679

Current Rating :

4A

Radiation Hardening :

No