BD679A
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- Mfr.Part #
- BD679A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 8,956
- In Stock ：
- 8,956
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- hFE Min :
- 750
- Lead Free :
- Lead Free
- Height :
- 10.8mm
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 40W
- Width :
- 2.7mm
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 80V
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Saturation Voltage :
- 2.8V
- Case Connection :
- Isolated
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Length :
- 7.8mm
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity :
- NPN
- Contact Plating :
- Tin
- Current Rating :
- 4A
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Continuous Collector Current :
- 4A
- Radiation Hardening :
- No
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Base Part Number :
- BD679
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Transition Frequency :
- 10MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD679A
BD679A Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD679A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD679A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD679A Applications
There are a lot of STMicroelectronics
BD679A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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