BD679A
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- Mfr.Part #
- BD679A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 8,956
- In Stock ：
- 8,956
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BD679
- Polarity :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2.8V
- Package / Case :
- TO-225AA, TO-126-3
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 500μA
- REACH SVHC :
- No SVHC
- Length :
- 7.8mm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 10MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 4A
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 4A
- hFE Min :
- 750
- Case Connection :
- Isolated
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Through Hole
- Width :
- 2.7mm
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 80V
- Transistor Type :
- NPN - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tube
- Height :
- 10.8mm
- Max Power Dissipation :
- 40W
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Datasheets
- BD679A
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD679A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD679A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD679A Applications
There are a lot of STMicroelectronics
BD679A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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