BD679
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- Mfr.Part #
- BD679
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 39,040
- In Stock ：
- 39,040
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- hFE Min :
- 750
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 500μA
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 2.5V
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Current Rating :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Number of Pins :
- 3
- Length :
- 7.8mm
- Height :
- 11.05mm
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 40W
- Width :
- 2.9mm
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Base Part Number :
- BD679
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-225AA, TO-126-3
- Radiation Hardening :
- No
- Packaging :
- Tube
- Number of Elements :
- 1
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 40W
- Transition Frequency :
- 10MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 80V
- Datasheets
- BD679
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
The BD679 is an NPN darlington transistor that comes in two packages: TO-225 and TO-126. A darlington transistor is made up of two BJT transistors in a single package that are coupled in such a way that the output gain is extremely high.
The transistor's maximum gain, or Hfe, is 1000, making it suited for high gain applications. The collector current maximum is 4A, with a peak collector current of 6A.
The transistor's collector-emitter voltage, or maximum load voltage, is 80V, and its collector dissipation is 40Watt. The BD679 can be utilized in a wide range of switching and amplification applications.
BD679 Features
Transistor Type: NPN
Max Collector Current(IC): 4A
Package Type: TO-225, TO-126
Pb-Free Packages are Available
Max Peak Collector Current: 6A
Max Emitter-Base Voltage (VEBO): 5V
Max Collector Dissipation (Pc): 40 Watt
Max Collector-Base Voltage (VCB): 80V
Max Collector-Emitter Voltage (VCE): 80V
Minimum & Maximum DC Current Gain (hFE): 1000
Max Storage & Operating temperature: -65 to +150 Centigrade
BD679 Applications
BMS Circuits
Motor Driver Circuits
Switching Application
Medium Power Linear
Battery Charger Circuits
Audio Amplifier Circuits
General–Purpose Amplifier
Audio Preamplifiers and Its Stages
Driving or Switching Loads under 4A
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