BD679

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

2.5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Current - Collector Cutoff (Max) :

500μA

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Length :

7.8mm

Transistor Application :

SWITCHING

Pin Count :

3

Transistor Element Material :

SILICON

Case Connection :

Isolated

Radiation Hardening :

No

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Voltage - Rated DC :

80V

ECCN Code :

EAR99

Package / Case :

TO-225AA, TO-126-3

hFE Min :

750

Transistor Type :

NPN - Darlington

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

80V

Packaging :

Tube

Base Part Number :

BD679

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Power Dissipation :

40W

Element Configuration :

Single

Max Collector Current :

4A

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Max Power Dissipation :

40W

Number of Pins :

3

Factory Lead Time :

8 Weeks

Number of Elements :

1

JESD-609 Code :

e3

Current Rating :

4A

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

10MHz

Width :

2.9mm

Height :

11.05mm

Contact Plating :

Tin