BD679

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Transistor Element Material :

SILICON

Transition Frequency :

10MHz

Collector Emitter Saturation Voltage :

2.5V

Collector Emitter Breakdown Voltage :

80V

REACH SVHC :

No SVHC

Element Configuration :

Single

Package / Case :

TO-225AA, TO-126-3

Number of Pins :

3

ECCN Code :

EAR99

Current Rating :

4A

Collector Emitter Voltage (VCEO) :

80V

Max Collector Current :

4A

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

750

Polarity :

NPN

Current - Collector Cutoff (Max) :

500μA

Power Dissipation :

40W

Radiation Hardening :

No

Case Connection :

Isolated

Voltage - Rated DC :

80V

Collector Base Voltage (VCBO) :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Height :

11.05mm

Number of Elements :

1

Mount :

Through Hole

Base Part Number :

BD679

Max Power Dissipation :

40W

Factory Lead Time :

8 Weeks

Transistor Type :

NPN - Darlington

Pin Count :

3

Contact Plating :

Tin

Length :

7.8mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Number of Terminations :

3

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Width :

2.9mm