BD678G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

2.5V

hFE Min :

750

Radiation Hardening :

No

Base Part Number :

BD678

Halogen Free :

Halogen Free

Transition Frequency :

200MHz

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

JESD-609 Code :

e3

Voltage - Rated DC :

-60V

Collector Emitter Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Polarity :

PNP

Collector Base Voltage (VCBO) :

60V

Packaging :

Bulk

Max Collector Current :

4A

Package / Case :

TO-225AA, TO-126-3

Transistor Application :

AMPLIFIER

Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Number of Pins :

3

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500μA

Collector Emitter Voltage (VCEO) :

60V

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Published :

1995

Number of Elements :

1

Current Rating :

-4A

Max Power Dissipation :

40W

Mounting Type :

Through Hole

Transistor Type :

PNP - Darlington