BD678G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

PNP - Darlington

Collector Base Voltage (VCBO) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Max Power Dissipation :

40W

Published :

1995

hFE Min :

750

Lead Free :

Lead Free

Voltage - Rated DC :

-60V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Number of Terminations :

3

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Power Dissipation :

40W

Factory Lead Time :

5 Weeks

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Polarity :

PNP

Collector Emitter Saturation Voltage :

2.5V

Current - Collector Cutoff (Max) :

500μA

Package / Case :

TO-225AA, TO-126-3

JESD-609 Code :

e3

Pin Count :

3

Current Rating :

-4A

Base Part Number :

BD678

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Bulk

Surface Mount :

No

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

4A

Mounting Type :

Through Hole

Contact Plating :

Tin

Transition Frequency :

200MHz

REACH SVHC :

No SVHC

Radiation Hardening :

No