BD678AS
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- Mfr.Part #
- BD678AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A TO126-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 14W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Length :
- 8mm
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- -60V
- Current Rating :
- -4A
- Transistor Type :
- PNP - Darlington
- Lead Free :
- Lead Free
- Polarity :
- PNP
- Voltage - Rated DC :
- -60V
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Continuous Collector Current :
- -4A
- Mounting Type :
- Through Hole
- Base Part Number :
- BD678
- Collector Emitter Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 2.8V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- hFE Min :
- 750
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Height :
- 11mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Weight :
- 761mg
- Width :
- 3.25mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max) :
- 500μA
- Mount :
- Through Hole
- Power - Max :
- 14W
- Radiation Hardening :
- No
- Datasheets
- BD678AS
BD678AS Documents
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD678AS Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.8V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -4A is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.The maximum collector current is 4A volts.
BD678AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD678AS Applications
There are a lot of ON Semiconductor
BD678AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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