BD678AG

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Mfr.Part #
BD678AG
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 60V 4A TO126
Stock
5,960
In Stock :
5,960

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
hFE Min :
750
Factory Lead Time :
2 Weeks
Current - Collector Cutoff (Max) :
500μA
Lead Free :
Lead Free
Pbfree Code :
yes
Element Configuration :
Single
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
2.8V
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
BD678
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
60V
Published :
2005
Length :
7.74mm
Halogen Free :
Halogen Free
RoHS Status :
ROHS3 Compliant
Power Dissipation :
40W
Polarity :
PNP
Weight :
4.535924g
Collector Base Voltage (VCBO) :
60V
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Terminal Finish :
Tin (Sn)
Transistor Type :
PNP - Darlington
Package / Case :
TO-225AA, TO-126-3
Voltage - Rated DC :
-60V
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Width :
2.66mm
Max Collector Current :
4A
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
60V
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
5V
Pin Count :
3
Current Rating :
4A
Max Breakdown Voltage :
450V
Number of Pins :
3
Number of Terminations :
3
Surface Mount :
No
Transistor Application :
AMPLIFIER
Height :
11.04mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Power Dissipation :
40W
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD678AG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:BD678, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, BD678AG pinout, BD678AG datasheet PDF, BD678AG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD678AG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD678AG


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD678AG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.This device can take an input voltage of 450V volts before it breaks down.A maximum collector current of 4A volts can be achieved.

BD678AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD678AG Applications


There are a lot of ON Semiconductor
BD678AG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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