BD678AG

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Mfr.Part #
BD678AG
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 60V 4A TO126
Stock
5,960
In Stock :
5,960

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
2.8V
Max Breakdown Voltage :
450V
Lead Free :
Lead Free
Length :
7.74mm
Element Configuration :
Single
Number of Elements :
1
Power Dissipation :
40W
Mounting Type :
Through Hole
Transistor Type :
PNP - Darlington
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Weight :
4.535924g
Width :
2.66mm
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
60V
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
500μA
Current Rating :
4A
Number of Terminations :
3
Package / Case :
TO-225AA, TO-126-3
Surface Mount :
No
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-60V
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
AMPLIFIER
Collector Base Voltage (VCBO) :
60V
Transistor Element Material :
SILICON
hFE Min :
750
Max Collector Current :
4A
Base Part Number :
BD678
Halogen Free :
Halogen Free
Height :
11.04mm
Terminal Finish :
Tin (Sn)
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Max Power Dissipation :
40W
Collector Emitter Voltage (VCEO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Polarity :
PNP
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
REACH SVHC :
No SVHC
Published :
2005
Factory Lead Time :
2 Weeks
Datasheets
BD678AG
Introducing Transistors - Bipolar (BJT) - Single onsemi BD678AG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-55°C~150°C TJ, Base Part Number:BD678, Number of Pins:3, BD678AG pinout, BD678AG datasheet PDF, BD678AG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD678AG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD678AG


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD678AG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.This device can take an input voltage of 450V volts before it breaks down.A maximum collector current of 4A volts can be achieved.

BD678AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD678AG Applications


There are a lot of ON Semiconductor
BD678AG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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