BD678AG
- Mfr.Part #
- BD678AG
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A TO126
- Stock
- 5,960
- In Stock :
- 5,960
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2.8V
- Max Breakdown Voltage :
- 450V
- Lead Free :
- Lead Free
- Length :
- 7.74mm
- Element Configuration :
- Single
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP - Darlington
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Weight :
- 4.535924g
- Width :
- 2.66mm
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 500μA
- Current Rating :
- 4A
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Surface Mount :
- No
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- hFE Min :
- 750
- Max Collector Current :
- 4A
- Base Part Number :
- BD678
- Halogen Free :
- Halogen Free
- Height :
- 11.04mm
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Published :
- 2005
- Factory Lead Time :
- 2 Weeks
- Datasheets
- BD678AG
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PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD678AG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.This device can take an input voltage of 450V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
BD678AG Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD678AG Applications
There are a lot of ON Semiconductor
BD678AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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