BD678A
- Mfr.Part #
- BD678A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A SOT32-3
- Stock
- 11,987
- In Stock :
- 11,987
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Max Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Polarity :
- PNP
- Height :
- 10.8mm
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Length :
- 7.8mm
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Width :
- 2.7mm
- Transistor Type :
- PNP - Darlington
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Package / Case :
- TO-225AA, TO-126-3
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 40W
- Mount :
- Through Hole
- Packaging :
- Tube
- Base Part Number :
- BD678
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Continuous Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 2.8V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 750
- Current Rating :
- -4A
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 10MHz
- Number of Elements :
- 1
- Datasheets
- BD678A
BD678A Documents

PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD678A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD678A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD678A Applications
There are a lot of STMicroelectronics
BD678A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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