BD678A
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- Mfr.Part #
- BD678A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A SOT32-3
- Stock
- 11,987
- In Stock ：
- 11,987
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 500μA
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 10MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 10.8mm
- Max Collector Current :
- 4A
- hFE Min :
- 750
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 40W
- Contact Plating :
- Tin
- Length :
- 7.8mm
- Number of Pins :
- 3
- Width :
- 2.7mm
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2.8V
- Number of Terminations :
- 3
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Current Rating :
- -4A
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- JESD-609 Code :
- e3
- Base Part Number :
- BD678
- Polarity :
- PNP
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Datasheets
- BD678A
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD678A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD678A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD678A Applications
There are a lot of STMicroelectronics
BD678A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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