BD677G
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- Mfr.Part #
- BD677G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126
- Stock
- 13,050
- In Stock ：
- 13,050
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 40W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD677
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Type :
- NPN - Darlington
- Current Rating :
- -4A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 11 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Voltage - Rated DC :
- -60V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 40W
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Number of Pins :
- 3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 750
- Published :
- 1995
- Transistor Element Material :
- SILICON
- Datasheets
- BD677G
BD677G Documents
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD677G Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 30mA, 1.5A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD677G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz
BD677G Applications
There are a lot of ON Semiconductor
BD677G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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