BD677G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Pbfree Code :

yes

Polarity :

NPN

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Type :

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation :

40W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

Max Power Dissipation :

40W

Voltage - Rated DC :

-60V

Current Rating :

-4A

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

AMPLIFIER

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Saturation Voltage :

2.5V

Emitter Base Voltage (VEBO) :

5V

Published :

1995

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

REACH SVHC :

No SVHC

Number of Elements :

1

hFE Min :

750

Halogen Free :

Halogen Free

Base Part Number :

BD677

Packaging :

Bulk

Factory Lead Time :

11 Weeks

Transition Frequency :

200MHz

Current - Collector Cutoff (Max) :

500μA

Collector Emitter Voltage (VCEO) :

60V

Max Collector Current :

4A

Pin Count :

3

JESD-609 Code :

e3