BD677AS
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- Mfr.Part #
- BD677AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 1,405
- In Stock ：
- 1,405
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Continuous Collector Current :
- 4A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Base Part Number :
- BD677
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Transition Frequency :
- 3MHz
- Weight :
- 761mg
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 750
- Polarity :
- NPN
- Voltage - Rated DC :
- 60V
- Current Rating :
- 4A
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500μA
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2000
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 2.8V
- Datasheets
- BD677AS
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD677AS Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.8V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 3MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 4A volts.
BD677AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD677AS Applications
There are a lot of ON Semiconductor
BD677AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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