BD677AS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Published :

2000

Polarity :

NPN

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Single

Number of Terminations :

3

ECCN Code :

EAR99

hFE Min :

750

Base Part Number :

BD677

Collector Emitter Voltage (VCEO) :

60V

Collector Emitter Saturation Voltage :

2.8V

Package / Case :

TO-225AA, TO-126-3

Continuous Collector Current :

4A

Radiation Hardening :

No

Power Dissipation :

40W

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

60V

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Max Power Dissipation :

40W

Current - Collector Cutoff (Max) :

500μA

Pbfree Code :

yes

Current Rating :

4A

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Transistor Type :

NPN - Darlington

Number of Pins :

3

Max Collector Current :

4A

Contact Plating :

Tin

Max Breakdown Voltage :

60V

Weight :

761mg

Factory Lead Time :

6 Weeks

Transition Frequency :

3MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Mounting Type :

Through Hole