BD677AS

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

60V

Current - Collector Cutoff (Max) :

500μA

Contact Plating :

Tin

Max Power Dissipation :

40W

Number of Pins :

3

Power Dissipation :

40W

Transistor Application :

SWITCHING

Published :

2000

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Element Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

Transition Frequency :

3MHz

Transistor Element Material :

SILICON

Base Part Number :

BD677

Collector Emitter Saturation Voltage :

2.8V

Collector Emitter Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Mount :

Through Hole

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Voltage (VCEO) :

60V

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Pbfree Code :

yes

Continuous Collector Current :

4A

Packaging :

Bulk

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

hFE Min :

750

Polarity :

NPN

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Current Rating :

4A

Voltage - Rated DC :

60V

Number of Terminations :

3

Transistor Type :

NPN - Darlington

Max Collector Current :

4A

Factory Lead Time :

6 Weeks

Weight :

761mg

Mounting Type :

Through Hole