BD677AG
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- Mfr.Part #
- BD677AG
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -4A
- Polarity :
- NPN
- Height :
- 11.04mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Length :
- 7.74mm
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 500μA
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2.8V
- Width :
- 2.66mm
- Max Collector Current :
- 4A
- Power Dissipation :
- 40W
- Pbfree Code :
- yes
- Max Power Dissipation :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 750
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Base Part Number :
- BD677
- Voltage - Rated DC :
- -60V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BD677AG
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD677AG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD677AG Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
BD677AG Applications
There are a lot of ON Semiconductor
BD677AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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