BD677AG

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Mfr.Part #
BD677AG
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A TO126
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
No
Max Power Dissipation :
40W
Current Rating :
-4A
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
ECCN Code :
EAR99
Base Part Number :
BD677
Width :
2.66mm
Voltage - Rated DC :
-60V
Collector Emitter Saturation Voltage :
2.8V
Transistor Application :
AMPLIFIER
Package / Case :
TO-225AA, TO-126-3
Lead Free :
Lead Free
Transistor Type :
NPN - Darlington
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
500μA
Power Dissipation :
40W
Number of Pins :
3
Polarity :
NPN
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
60V
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
60V
Number of Terminations :
3
JESD-609 Code :
e3
Radiation Hardening :
No
hFE Min :
750
Published :
2008
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Max Collector Current :
4A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Mounting Type :
Through Hole
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Factory Lead Time :
2 Weeks
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
5V
Height :
11.04mm
Length :
7.74mm
Collector Base Voltage (VCBO) :
60V
Introducing Transistors - Bipolar (BJT) - Single onsemi BD677AG from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD677, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, BD677AG pinout, BD677AG datasheet PDF, BD677AG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD677AG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD677AG


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD677AG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD677AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A


BD677AG Applications


There are a lot of ON Semiconductor
BD677AG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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