BD677A
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- Mfr.Part #
- BD677A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A SOT32-3
- Stock
- 10,575
- In Stock ：
- 10,575
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 40W
- Case Connection :
- Isolated
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Continuous Collector Current :
- 4A
- Width :
- 2.7mm
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Current Rating :
- 4A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 10MHz
- hFE Min :
- 750
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BD677
- Current - Collector Cutoff (Max) :
- 500μA
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2.8V
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Length :
- 7.8mm
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Polarity :
- NPN
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 4A
- Height :
- 10.8mm
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD677A
BD677A Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD677A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677A Applications
There are a lot of STMicroelectronics
BD677A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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