BD677

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Mfr.Part #
BD677
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A TO126
Stock
4,227
In Stock :
4,227

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Height :
10.8mm
Collector Emitter Breakdown Voltage :
60V
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Contact Plating :
Tin
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Mount :
Through Hole
Base Part Number :
BD677
Packaging :
Tube
Collector Emitter Saturation Voltage :
2.5V
Number of Pins :
3
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
REACH SVHC :
No SVHC
Transition Frequency :
10MHz
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
RoHS Status :
ROHS3 Compliant
Current Rating :
4A
Length :
7.8mm
Radiation Hardening :
No
Voltage - Rated DC :
60V
Width :
2.7mm
hFE Min :
750
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Mounting Type :
Through Hole
Max Collector Current :
4A
Current - Collector Cutoff (Max) :
500μA
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Voltage (VCEO) :
60V
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
Lead Free :
Lead Free
Max Power Dissipation :
40W
Power Dissipation :
40W
Collector Base Voltage (VCBO) :
60V
Transistor Type :
NPN - Darlington
Pin Count :
3
Case Connection :
Isolated
Datasheets
BD677
Introducing Transistors - Bipolar (BJT) - Single onsemi BD677 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:BD677, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, BD677 pinout, BD677 datasheet PDF, BD677 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD677 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD677


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD677 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD677 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz


BD677 Applications


There are a lot of STMicroelectronics
BD677 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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