BD677

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Mfr.Part #
BD677
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A TO126
Stock
4,227
In Stock :
4,227

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Darlington
Collector Base Voltage (VCBO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
hFE Min :
750
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Saturation Voltage :
2.5V
Mount :
Through Hole
Packaging :
Tube
Lead Free :
Lead Free
Operating Temperature :
150°C TJ
Length :
7.8mm
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
REACH SVHC :
No SVHC
Number of Elements :
1
ECCN Code :
EAR99
Case Connection :
Isolated
Package / Case :
TO-225AA, TO-126-3
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Collector Emitter Voltage (VCEO) :
60V
Element Configuration :
Single
Pin Count :
3
Width :
2.7mm
Transition Frequency :
10MHz
Polarity :
NPN
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
60V
Current - Collector Cutoff (Max) :
500μA
Height :
10.8mm
Current Rating :
4A
Radiation Hardening :
No
Max Power Dissipation :
40W
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Base Part Number :
BD677
Voltage - Rated DC :
60V
Max Collector Current :
4A
Contact Plating :
Tin
JESD-609 Code :
e3
Power Dissipation :
40W
Number of Terminations :
3
Mounting Type :
Through Hole
Number of Pins :
3
Introducing Transistors - Bipolar (BJT) - Single onsemi BD677 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD677, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, BD677 pinout, BD677 datasheet PDF, BD677 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD677 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD677


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD677 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD677 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz


BD677 Applications


There are a lot of STMicroelectronics
BD677 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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