BD676G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

200MHz

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Number of Pins :

3

Base Part Number :

BD676

Number of Elements :

1

Current - Collector Cutoff (Max) :

500μA

Contact Plating :

Tin

Height :

11.04mm

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Published :

2005

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

ECCN Code :

EAR99

Package / Case :

TO-225AA, TO-126-3

hFE Min :

750

Current Rating :

-4A

Transistor Application :

AMPLIFIER

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Max Power Dissipation :

40W

Collector Base Voltage (VCBO) :

45V

Collector Emitter Breakdown Voltage :

45V

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

7.74mm

Polarity :

PNP

Voltage - Rated DC :

-45V

Transistor Type :

PNP - Darlington

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Max Collector Current :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Number of Terminations :

3

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Width :

2.66mm

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Power Dissipation :

40W