BD676AS
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- Mfr.Part #
- BD676AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 45V 4A TO126-3
- Stock
- 2,932
- In Stock ：
- 2,932
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Pins :
- 3
- Polarity :
- PNP
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mount :
- Through Hole
- Weight :
- 761mg
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Current Rating :
- -4A
- Max Power Dissipation :
- 14W
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 750
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -45V
- Continuous Collector Current :
- -4A
- Max Collector Current :
- 4A
- Base Part Number :
- BD676
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -45V
- Current - Collector Cutoff (Max) :
- 500μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- 2.8V
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- PNP - Darlington
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Power Dissipation :
- 14W
- Datasheets
- BD676AS
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD676AS Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.Collector current can be as low as 4A volts at its maximum.
BD676AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD676AS Applications
There are a lot of ON Semiconductor
BD676AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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