BD676AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500μA

Transistor Element Material :

SILICON

Published :

2008

JESD-609 Code :

e3

Current Rating :

-4A

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

PNP - Darlington

Collector Base Voltage (VCBO) :

45V

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Max Collector Current :

4A

Polarity :

PNP

Number of Elements :

1

Number of Terminations :

3

hFE Min :

750

Pbfree Code :

yes

Surface Mount :

No

Packaging :

Bulk

Base Part Number :

BD676

Pin Count :

3

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Package / Case :

TO-225AA, TO-126-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Power Dissipation :

40W

Collector Emitter Saturation Voltage :

2.5V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Max Power Dissipation :

40W

Voltage - Rated DC :

-45V