BD676

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Mfr.Part #
BD676
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 45V 4A TO126
Stock
1,239
In Stock :
1,239

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP - Darlington
Lead Free :
Contains Lead
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) :
45V
Max Operating Temperature :
150°C
Number of Elements :
1
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Packaging :
Bulk
Current - Collector (Ic) (Max) :
4A
Operating Temperature :
-55°C~150°C TJ
Power - Max :
40W
Mounting Type :
Through Hole
Power Dissipation :
40W
Emitter Base Voltage (VEBO) :
5V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Supplier Device Package :
TO-225AA
Polarity :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
45V
Collector Base Voltage (VCBO) :
45V
Base Part Number :
BD676
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Collector Emitter Breakdown Voltage :
45V
Voltage - Rated DC :
-45V
hFE Min :
750
Published :
2008
Current - Collector Cutoff (Max) :
500μA
Min Operating Temperature :
-55°C
Max Collector Current :
4A
Current Rating :
-4A
Continuous Collector Current :
4A
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
40W
Datasheets
BD676
Introducing Transistors - Bipolar (BJT) - Single onsemi BD676 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:BD676, Package / Case:TO-225AA, TO-126-3, BD676 pinout, BD676 datasheet PDF, BD676 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD676 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD676


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements TO-225AA, TO-126-3 Bulk Through Hole

BD676 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.Supplier package TO-225AA contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4A volts can be achieved.

BD676 Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA


BD676 Applications


There are a lot of ON Semiconductor
BD676 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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