BD675G
- Mfr.Part #
- BD675G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 4A TO126
- Stock
- 25,706
- In Stock :
- 25,706
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 1MHz
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Radiation Hardening :
- No
- Base Part Number :
- BD675
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Length :
- 7.74mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-225AA, TO-126-3
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 45V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- hFE Min :
- 750
- Surface Mount :
- No
- Width :
- 2.66mm
- Max Power Dissipation :
- 40W
- Number of Pins :
- 3
- Element Configuration :
- Single
- Height :
- 11.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 4A
- Collector Emitter Saturation Voltage :
- 2.5V
- Max Collector Current :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Polarity :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 40W
- Factory Lead Time :
- 14 Weeks
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- AMPLIFIER
- Datasheets
- BD675G
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD675G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 1MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD675G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz
BD675G Applications
There are a lot of ON Semiconductor
BD675G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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