BD675AS
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- Mfr.Part #
- BD675AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 4A TO126-3
- Stock
- 49,015
- In Stock ：
- 49,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.8V
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Published :
- 2000
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- BD675
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Weight :
- 761mg
- Transistor Type :
- NPN - Darlington
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Power Dissipation :
- 40W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Packaging :
- Bulk
- hFE Min :
- 750
- Continuous Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current Rating :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Transition Frequency :
- 10MHz
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Collector Current :
- 4A
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 500μA
- Datasheets
- BD675AS
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD675AS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD675AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD675AS Applications
There are a lot of ON Semiconductor
BD675AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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