BD675AS
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- Mfr.Part #
- BD675AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 4A TO126-3
- Stock
- 1,719
- In Stock ：
- 1,719
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 500μA
- Polarity :
- NPN
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Continuous Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 45V
- Transistor Application :
- SWITCHING
- Published :
- 2000
- Package / Case :
- TO-225AA, TO-126-3
- Mount :
- Through Hole
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- BD675
- ECCN Code :
- EAR99
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Tin
- Max Power Dissipation :
- 40W
- hFE Min :
- 750
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transition Frequency :
- 10MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Weight :
- 761mg
- Collector Emitter Saturation Voltage :
- 2.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 40W
- Datasheets
- BD675AS
BD675AS Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD675AS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD675AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD675AS Applications
There are a lot of ON Semiconductor
BD675AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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