BD675AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

11.04mm

ECCN Code :

EAR99

hFE Min :

750

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

45V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

40W

Pin Count :

3

Continuous Collector Current :

4A

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Contact Plating :

Tin

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Published :

2008

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

7.74mm

Current Rating :

4A

Max Power Dissipation :

40W

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

2.8V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BD675

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

45V

Package / Case :

TO-225AA, TO-126-3

Voltage - Rated DC :

45V

Packaging :

Bulk

Number of Pins :

3

Width :

2.66mm

Factory Lead Time :

2 Weeks

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Gain Bandwidth Product :

1MHz

Current - Collector Cutoff (Max) :

500μA

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

2.8V @ 40mA, 2A

Transistor Element Material :

SILICON

Max Collector Current :

4A

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Polarity :

NPN

Operating Temperature :

-55°C~150°C TJ