BD675AG

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Mfr.Part #
BD675AG
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 45V 4A TO126
Stock
419
In Stock :
419

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
4A
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
45V
Width :
2.66mm
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Number of Pins :
3
Pbfree Code :
yes
Package / Case :
TO-225AA, TO-126-3
Surface Mount :
No
JESD-609 Code :
e3
Base Part Number :
BD675
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
2 Weeks
Polarity :
NPN
Continuous Collector Current :
4A
Height :
11.04mm
Collector Emitter Breakdown Voltage :
45V
Halogen Free :
Halogen Free
Power Dissipation :
40W
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
2.8V
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
45V
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
500μA
Published :
2008
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
hFE Min :
750
Voltage - Rated DC :
45V
Element Configuration :
Single
Pin Count :
3
Max Power Dissipation :
40W
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
1MHz
Length :
7.74mm
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Current Rating :
4A
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Transistor Application :
AMPLIFIER
Packaging :
Bulk
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Introducing Transistors - Bipolar (BJT) - Single onsemi BD675AG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD675, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, BD675AG pinout, BD675AG datasheet PDF, BD675AG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD675AG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD675AG


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD675AG Overview


In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.8V @ 40mA, 2A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).Maximum collector currents can be below 4A volts.

BD675AG Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD675AG Applications


There are a lot of ON Semiconductor
BD675AG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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