BD675A

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Mfr.Part #
BD675A
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 45V 4A TO126
Stock
1,501
In Stock :
1,501

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
45V
Package / Case :
TO-225AA, TO-126-3
Packaging :
Bulk
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
5V
Lead Free :
Contains Lead
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Number of Pins :
3
Pin Count :
3
Polarity :
NPN
Published :
2008
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Max Collector Current :
4A
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Collector Emitter Voltage (VCEO) :
45V
Collector Base Voltage (VCBO) :
45V
Qualification Status :
Not Qualified
Max Power Dissipation :
40W
Number of Elements :
1
Continuous Collector Current :
4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
40W
Number of Terminations :
3
Voltage - Rated DC :
45V
Transistor Application :
AMPLIFIER
RoHS Status :
Non-RoHS Compliant
Base Part Number :
BD675
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
2.8V
hFE Min :
750
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Transistor Type :
NPN - Darlington
Mount :
Through Hole
Current - Collector Cutoff (Max) :
500μA
Mounting Type :
Through Hole
Current Rating :
4A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD675A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Base Part Number:BD675, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, BD675A pinout, BD675A datasheet PDF, BD675A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD675A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD675A


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD675A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.

BD675A Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD675A Applications


There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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