BD675A

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Mfr.Part #
BD675A
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 45V 4A TO126
Stock
1,501
In Stock :
1,501

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
45V
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
AMPLIFIER
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Element Configuration :
Single
Packaging :
Bulk
Collector Emitter Saturation Voltage :
2.8V
Pin Count :
3
ECCN Code :
EAR99
hFE Min :
750
Current Rating :
4A
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
500μA
Published :
2008
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
45V
Lead Free :
Contains Lead
Power Dissipation :
40W
Peak Reflow Temperature (Cel) :
260
Polarity :
NPN
Qualification Status :
Not Qualified
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Voltage - Rated DC :
45V
Collector Emitter Voltage (VCEO) :
45V
Continuous Collector Current :
4A
Max Power Dissipation :
40W
Transistor Element Material :
SILICON
Transistor Type :
NPN - Darlington
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Package / Case :
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Base Part Number :
BD675
Max Collector Current :
4A
Datasheets
BD675A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD675A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-55°C~150°C TJ, Base Part Number:BD675, BD675A pinout, BD675A datasheet PDF, BD675A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD675A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD675A


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD675A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.

BD675A Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD675A Applications


There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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