BD675A
- Mfr.Part #
- BD675A
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 4A TO126
- Stock
- 1,501
- In Stock :
- 1,501
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 2.8V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- hFE Min :
- 750
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 500μA
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 45V
- Lead Free :
- Contains Lead
- Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Polarity :
- NPN
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Continuous Collector Current :
- 4A
- Max Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Base Part Number :
- BD675
- Max Collector Current :
- 4A
- Datasheets
- BD675A
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD675A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 2A 3V.The collector emitter saturation voltage is 2.8V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.A maximum collector current of 4A volts can be achieved.
BD675A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD675A Applications
There are a lot of ON Semiconductor
BD675A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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