BD650-S

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Mfr.Part #
BD650-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 100V 8A TO220
Stock
49,388
In Stock :
49,388

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Collector Base Voltage (VCBO) :
120V
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Collector Emitter Breakdown Voltage :
100V
Mounting Type :
Through Hole
Max Collector Current :
8A
Mount :
Through Hole
Case Connection :
COLLECTOR
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Voltage (VCEO) :
100V
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
Package / Case :
TO-220-3
Transistor Element Material :
SILICON
Published :
1993
Number of Terminations :
3
Number of Elements :
1
Max Power Dissipation :
2W
Base Part Number :
BD650
Radiation Hardening :
No
Transistor Type :
PNP - Darlington
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
2V
Operating Temperature :
-65°C~150°C TJ
Polarity :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Power - Max :
2W
Element Configuration :
Single
hFE Min :
750
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Datasheets
BD650-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD650-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Base Part Number:BD650, Operating Temperature:-65°C~150°C TJ, BD650-S pinout, BD650-S datasheet PDF, BD650-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD650-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD650-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD650-S Overview


DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 50mA, 5A.An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 8A volts.

BD650-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD650-S Applications


There are a lot of Bourns Inc.
BD650-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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