BD539A-S
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- Mfr.Part #
- BD539A-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO220
- Stock
- 10,971
- In Stock ：
- 10,971
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Max Power Dissipation :
- 45W
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Power Dissipation :
- 45W
- Radiation Hardening :
- No
- Base Part Number :
- BD539
- Max Collector Current :
- 5A
- Power - Max :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 5A
- Transistor Type :
- NPN
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 3A 4V
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 300μA
- Published :
- 1993
- Polarity/Channel Type :
- NPN
- Datasheets
- BD539A-S
NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD539A-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 5A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
BD539A-S Features
the DC current gain for this device is 12 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 5A
the emitter base voltage is kept at 5V
BD539A-S Applications
There are a lot of Bourns Inc.
BD539A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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