BD536

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Mfr.Part #
BD536
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 8A TO220
Stock
1,193
In Stock :
1,193

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Power Dissipation :
50W
Collector Base Voltage (VCBO) :
60V
Collector Emitter Saturation Voltage :
800mV
Pbfree Code :
yes
hFE Min :
20
Voltage - Rated DC :
-60V
Vce Saturation (Max) @ Ib, Ic :
800mV @ 600mA, 6A
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 2A 2V
Transistor Element Material :
SILICON
Current Rating :
-8A
JESD-609 Code :
e3
Mount :
Through Hole
Max Collector Current :
8A
Base Part Number :
BD536
Number of Terminations :
3
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Contact Plating :
Tin
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Transistor Type :
PNP
Element Configuration :
Single
Gain Bandwidth Product :
12MHz
Lead Free :
Lead Free
Max Power Dissipation :
50W
Current - Collector Cutoff (Max) :
100μA
Pin Count :
3
Transition Frequency :
12MHz
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
60V
VCEsat-Max :
0.8 V
Polarity/Channel Type :
PNP
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
60V
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD536 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD536, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, BD536 pinout, BD536 datasheet PDF, BD536 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD536 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD536


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

BD536 Overview


This device has a DC current gain of 25 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 800mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.In this part, there is a transition frequency of 12MHz.The maximum collector current is 8A volts.

BD536 Features


the DC current gain for this device is 25 @ 2A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 12MHz


BD536 Applications


There are a lot of STMicroelectronics
BD536 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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