BD535

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Mfr.Part #
BD535
Manufacturer
Harris Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 8A TO220AB
Stock
1,765
In Stock :
1,765

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Manufacturer :
Harris Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Number of Terminations :
3
Transistor Type :
NPN
Current Rating :
8A
Transition Frequency :
12MHz
hFE Min :
20
Voltage - Rated DC :
60V
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
800mV @ 600mA, 6A
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
VCEsat-Max :
0.8 V
Mount :
Through Hole
Max Power Dissipation :
50W
Collector Emitter Breakdown Voltage :
60V
Max Collector Current :
8A
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Package / Case :
TO-220-3
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Element Configuration :
Single
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
60V
Gain Bandwidth Product :
12MHz
Base Part Number :
BD535
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 2A 2V
JESD-609 Code :
e3
Pin Count :
3
Packaging :
Tube
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
800mV
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
60V
Power Dissipation :
50W
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Datasheets
BD535
Introducing Transistors - Bipolar (BJT) - Single Harris Corporation BD535 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BD535, Number of Pins:3, BD535 pinout, BD535 datasheet PDF, BD535 amp .Beyond Transistors - Bipolar (BJT) - Single Harris Corporation BD535 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Harris Corporation BD535


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD535 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 2A 2V.The collector emitter saturation voltage is 800mV, which allows for maximum design flexibility.When VCE saturation is 800mV @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 12MHz.A maximum collector current of 8A volts can be achieved.

BD535 Features


the DC current gain for this device is 25 @ 2A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 12MHz


BD535 Applications


There are a lot of STMicroelectronics
BD535 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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