BD246B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

80W

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

80V

Case Connection :

COLLECTOR

Element Configuration :

Single

Number of Elements :

1

HTS Code :

8541.29.00.95

Vce Saturation (Max) @ Ib, Ic :

4V @ 2.5A, 10A

Polarity/Channel Type :

PNP

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

5V

Published :

1993

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Base Part Number :

BD246

Power - Max :

3W

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3A 4V

Package / Case :

TO-218-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-65°C~150°C TJ

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

80V

Number of Pins :

3

Pin Count :

3

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

700µA

Max Collector Current :

10A

Packaging :

Tube

JESD-609 Code :

e1