BD159G
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- Mfr.Part #
- BD159G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 31,747
- In Stock ：
- 31,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 500mA
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 350V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- hFE Min :
- 30
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 20W
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Transition Frequency :
- 6MHz
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 350V
- Current Rating :
- 500mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Base Part Number :
- BD159
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 20W
- Max Breakdown Voltage :
- 350V
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 375V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Datasheets
- BD159G
BD159G Documents
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NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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