BD159G

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Mfr.Part #
BD159G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 350V 0.5A TO126
Stock
31,747
In Stock :
31,747

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-225AA, TO-126-3
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
JESD-609 Code :
e3
Number of Pins :
3
hFE Min :
30
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Packaging :
Bulk
Base Part Number :
BD159
Number of Terminations :
3
Collector Base Voltage (VCBO) :
375V
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
Power Dissipation :
20W
Additional Feature :
High Reliability
Transistor Type :
NPN
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Operating Temperature :
-65°C~150°C TJ
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
100V
Max Collector Current :
500mA
Current - Collector Cutoff (Max) :
100μA ICBO
Collector Emitter Voltage (VCEO) :
350V
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 10V
Published :
2003
Transition Frequency :
6MHz
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Element Configuration :
Single
Transistor Application :
AMPLIFIER
Number of Elements :
1
Max Breakdown Voltage :
350V
Pin Count :
3
Voltage - Rated DC :
350V
Current Rating :
500mA
Max Power Dissipation :
20W
Introducing Transistors - Bipolar (BJT) - Single onsemi BD159G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Base Part Number:BD159, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, BD159G pinout, BD159G datasheet PDF, BD159G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD159G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD159G


NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD159G Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BD159G Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz


BD159G Applications


There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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