BD159G
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- Mfr.Part #
- BD159G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 31,747
- In Stock ：
- 31,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 20W
- hFE Min :
- 30
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Transistor Type :
- NPN
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 350V
- Transition Frequency :
- 6MHz
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Base Part Number :
- BD159
- Published :
- 2003
- Packaging :
- Bulk
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 20W
- Voltage - Rated DC :
- 350V
- Collector Base Voltage (VCBO) :
- 375V
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 350V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Datasheets
- BD159G
BD159G Documents
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NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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