BD159G
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- Mfr.Part #
- BD159G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 31,747
- In Stock ：
- 31,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 350V
- Max Breakdown Voltage :
- 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Pin Count :
- 3
- Transition Frequency :
- 6MHz
- Number of Elements :
- 1
- Additional Feature :
- High Reliability
- hFE Min :
- 30
- Base Part Number :
- BD159
- Max Power Dissipation :
- 20W
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Published :
- 2003
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 20W
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Surface Mount :
- No
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 350V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 375V
- Datasheets
- BD159G
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NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD159G Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 6MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BD159G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz
BD159G Applications
There are a lot of ON Semiconductor
BD159G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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