BCX71HT116
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- Mfr.Part #
- BCX71HT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.2A SST3
- Stock
- 71,843
- In Stock ：
- 71,843
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- TIN SILVER COPPER
- hFE Min :
- 140
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 180MHz
- Terminal Form :
- Gull wing
- Base Part Number :
- BCX71
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- -45V
- HTS Code :
- 8541.21.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 2mA 5V
- Collector-Base Capacitance-Max :
- 6pF
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 350mW
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Published :
- 2006
- Transition Frequency :
- 180MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- -250mV
- Continuous Collector Current :
- -200mA
- Current - Collector Cutoff (Max) :
- 100nA
- Current - Collector (Ic) (Max) :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 550mV
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Datasheets
- BCX71HT116
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX71HT116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 180MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BCX71HT116 Features
the DC current gain for this device is 140 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 180MHz
BCX71HT116 Applications
There are a lot of ROHM Semiconductor
BCX71HT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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