BCX70KT116
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- Mfr.Part #
- BCX70KT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SST3
- Stock
- 565
- In Stock ：
- 565
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e1
- hFE Min :
- 250
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Collector Current :
- 200mA
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- HTS Code :
- 8541.21.00.75
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCX70
- Max Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector-Base Capacitance-Max :
- 4.5pF
- Published :
- 2011
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 125MHz
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Collector Emitter Saturation Voltage :
- 550mV
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transition Frequency :
- 125MHz
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- BCX70KT116
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX70KT116 Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 550mV.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 200mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 200mA volts is possible.
BCX70KT116 Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCX70KT116 Applications
There are a lot of ROHM Semiconductor
BCX70KT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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