BCX70KE6327HTSA1
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- Mfr.Part #
- BCX70KE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 9,101
- In Stock ：
- 9,101
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 330mW
- Base Part Number :
- BCX70
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Transition Frequency :
- 250MHz
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Power Dissipation :
- 330mW
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Halogen Free :
- Not Halogen Free
- Published :
- 2007
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 45V
- Max Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 550mV
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Datasheets
- BCX70KE6327HTSA1
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX70KE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BCX70KE6327HTSA1 Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BCX70KE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX70KE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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