BCX70JT116
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- Mfr.Part #
- BCX70JT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SST3
- Stock
- 49,826
- In Stock ：
- 49,826
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 200mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 250
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 125MHz
- Radiation Hardening :
- No
- Published :
- 2011
- JESD-609 Code :
- e1
- Contact Plating :
- Copper, Silver, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 200mA
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 45V
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Channels :
- 1
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 200mA
- Collector Emitter Saturation Voltage :
- 550mV
- Collector-Base Capacitance-Max :
- 4.5pF
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BCX70
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Transition Frequency :
- 125MHz
- Max Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Datasheets
- BCX70JT116
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX70JT116 Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 550mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 200mA volts.
BCX70JT116 Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 125MHz
BCX70JT116 Applications
There are a lot of ROHM Semiconductor
BCX70JT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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