BCX19LT1G

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Mfr.Part #
BCX19LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.5A SOT23-3
Stock
5,668
In Stock :
5,668

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
940μm
Published :
2002
Radiation Hardening :
No
Current Rating :
500mA
Base Part Number :
BCX19
Voltage - Rated DC :
45V
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
300mW
Number of Elements :
1
hFE Min :
100
Number of Terminations :
3
Packaging :
Cut Tape (CT)
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Width :
1.3mm
Surface Mount :
yes
Pin Count :
3
Collector Emitter Saturation Voltage :
620mV
Power Dissipation :
300mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Base Voltage (VCBO) :
50V
Lead Free :
Lead Free
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
45V
Factory Lead Time :
4 Weeks
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Contact Plating :
Tin
Time@Peak Reflow Temperature-Max (s) :
40
Length :
2.9mm
Collector Emitter Breakdown Voltage :
45V
Emitter Base Voltage (VEBO) :
5V
Terminal Position :
Dual
Element Configuration :
Single
Transistor Type :
NPN
Number of Pins :
3
Max Collector Current :
500mA
Vce Saturation (Max) @ Ib, Ic :
620mV @ 50mA, 500mA
JESD-609 Code :
e3
Type :
GENERAL PURPOSE
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
45V
Transistor Element Material :
SILICON
Introducing Transistors - Bipolar (BJT) - Single onsemi BCX19LT1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BCX19, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:GENERAL PURPOSE, BCX19LT1G pinout, BCX19LT1G datasheet PDF, BCX19LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BCX19LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BCX19LT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

BCX19LT1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 620mV, which allows for maximum design flexibility.When VCE saturation is 620mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

BCX19LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA


BCX19LT1G Applications


There are a lot of ON Semiconductor
BCX19LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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