BCX19LT1G
- Mfr.Part #
- BCX19LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 5,668
- In Stock :
- 5,668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BCX19
- Number of Pins :
- 3
- Surface Mount :
- yes
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Type :
- GENERAL PURPOSE
- Terminal Form :
- Gull wing
- Published :
- 2002
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300mW
- Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 500mA
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 45V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 940μm
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 620mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 100
- Max Collector Current :
- 500mA
- Datasheets
- BCX19LT1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCX19LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 620mV, which allows for maximum design flexibility.When VCE saturation is 620mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
BCX19LT1G Applications
There are a lot of ON Semiconductor
BCX19LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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