BCV71,215
- Mfr.Part #
- BCV71,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.1A TO236AB
- Stock
- 1,760
- In Stock :
- 1,760
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Base Part Number :
- BCV71
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Power Dissipation :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 2.5mA, 50mA
- Terminal Finish :
- Tin (Sn)
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Datasheets
- BCV71,215

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV71,215 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 2.5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BCV71,215 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCV71,215 Applications
There are a lot of Nexperia USA Inc.
BCV71,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BCV71 | Nexperia | 10,542 | TRANS NPN 60V 0.5A SOT23-3 |
| BCV71-QR | Nexperia | 37,998 | TRANS NPN 60V 0.1A TO236AB |
| BCV72 | Nexperia | 27,712 | TRANS NPN 60V 0.5A SOT23-3 |
| BCV72,215 | Nexperia | 96,125 | TRANS NPN 60V 0.1A TO236AB |
| BCV72-QR | Nexperia | 23,898 | TRANS NPN 60V 0.1A TO236AB |
















