BCV65,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Dual

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Pins :

4

Pin Count :

4

Transition Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Published :

2010

Max Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

30V

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

TO-253-4, TO-253AA

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Transistor Type :

NPN, PNP (Emitter Coupled)

Max Collector Current :

100mA

Power Dissipation :

250mW

VCEsat-Max :

0.65 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 2mA 5V

Operating Temperature :

150°C TJ

Polarity :

NPN, PNP

hFE Min :

75

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

30V

Collector Emitter Voltage (VCEO) :

30V