BCV64B,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Emitter Base Voltage (VEBO) :

6V

Terminal Form :

Gull wing

Power Dissipation :

250mW

Element Configuration :

Dual

Case Connection :

COLLECTOR

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e3

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250mW

Mount :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

650mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

6V

VCEsat-Max :

0.65 V

Collector Base Voltage (VCBO) :

30V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Base Part Number :

BCV64

Number of Pins :

4

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Package / Case :

TO-253-4, TO-253AA

Transistor Application :

SWITCHING

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

15nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V / 220 @ 2mA 700mV

Collector Emitter Breakdown Voltage :

6V

Gain Bandwidth Product :

100MHz

Pin Count :

4

Published :

2010

Frequency :

100MHz