BCV63B,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

4 Weeks

Base Part Number :

BCV63

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

650mV

Pin Count :

4

Polarity :

NPN

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

30V

Published :

2010

Package / Case :

TO-253-4, TO-253AA

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Mount :

Surface Mount

Terminal Form :

Gull wing

Transistor Type :

2 NPN (Dual)

Max Breakdown Voltage :

6V

Power Dissipation :

250mW

Number of Pins :

4

Frequency :

100MHz

Number of Terminations :

4

VCEsat-Max :

0.65 V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

2

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V / 200 @ 2mA 700mV

Max Power Dissipation :

250mW

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Max Collector Current :

100mA

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

15nA ICBO

Gain Bandwidth Product :

100MHz