BCV63B,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2010

Base Part Number :

BCV63

Power Dissipation :

250mW

Collector Base Voltage (VCBO) :

30V

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V / 200 @ 2mA 700mV

Pin Count :

4

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

650mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

100MHz

Operating Temperature :

150°C TJ

Frequency :

100MHz

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

6V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Polarity :

NPN

Number of Terminations :

4

Element Configuration :

Dual

Contact Plating :

Tin

Transistor Element Material :

SILICON

Max Collector Current :

100mA

Max Breakdown Voltage :

6V

Case Connection :

COLLECTOR

VCEsat-Max :

0.65 V

Package / Case :

TO-253-4, TO-253AA

Lead Free :

Lead Free

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Current - Collector Cutoff (Max) :

15nA ICBO