BCV63,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

4 Weeks

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

650mV

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V / 110 @ 2mA 700mV

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

15nA ICBO

Base Part Number :

BCV63

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Breakdown Voltage :

6V

Max Power Dissipation :

250mW

Frequency :

100MHz

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

VCEsat-Max :

0.65 V

Qualification Status :

Not Qualified

Number of Terminations :

4

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Package / Case :

TO-253-4, TO-253AA

Element Configuration :

Dual

Published :

2010

Collector Emitter Breakdown Voltage :

6V

Transistor Element Material :

SILICON

Max Collector Current :

100mA

Power Dissipation :

250mW

Lead Free :

Lead Free

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Number of Elements :

2